Journal
SCIENCE CHINA-MATERIALS
Volume 63, Issue 3, Pages 421-428Publisher
SCIENCE PRESS
DOI: 10.1007/s40843-019-1212-x
Keywords
2D materials; multiferroic; iron-doping; In2Se3
Categories
Funding
- National Key Research and Development Program of China [2017YFA0207500]
- National Natural Science Foundation of China [61622406, 61571415, 51502283]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Beijing Academy of Quantum Information Sciences [Y18G04]
Ask authors/readers for more resources
Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile storage. Herein, we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fe-doped In2Se3 (Fe0.16In1.84Se3, FIS). The Fe atoms were doped at the In atom sites and the Fe content is similar to 3.22% according to the experiments. Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5 mu(B) per Fe atom when Fe substitutes In sites in In2Se3. The theoretical prediction was further confirmed experimentally by magnetic measurement. The results indicate that pure In2Se3 is diamagnetic, whereas FIS exhibits ferromagnetic behavior with a parallel anisotropy at 2 K and a Curie temperature of similar to 8 K. Furthermore, the sample maintains stable room-temperature ferroelectricity in piezoresponse force microscopy (PFM) measurement after the introduction of Fe atom into the ferroelectric In2Se3 nanoflakes. The findings indicate that the layered Fe0.16In1.84Se3 materials have potential in future nanoelectronic, magnetic, and optoelectronic applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available