Journal
APL MATERIALS
Volume 7, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5125211
Keywords
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Funding
- W2/W3 program of the Helmholtz association
- Deutsche Forschungsgemeinschaft [SFB 917]
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We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments. (C) 2019 Author(s).
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