Journal
APL MATERIALS
Volume 7, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5125809
Keywords
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Funding
- Semiconductor Research Corporation (SRC) as nCORE [task 2758.003]
- NSF under the E2CDA programs [ECCS-1740136]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05-CH11231]
- National Science Foundation [DMR-1708615]
- NSF MRSEC program [DMR1719875]
- NSF [ECCS-1542081]
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We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2-xO3 layers grown on SrRuO3-coated DyScO3(110)(o) substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics. (C) 2019 Author(s).
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