Journal
ADVANCED SCIENCE
Volume 7, Issue 1, Pages -Publisher
WILEY
DOI: 10.1002/advs.201901637
Keywords
gain; junction field-effect transistors; photoresponse; response time; tradeoff
Categories
Funding
- Natural Science Foundation of China [51502337, 61725505, 11734016, 61674157, 51472019, 61521005]
- Key research project of frontier science of CAS [QYZDB-SSW-JSC031]
- Open Fund of the State Key Laboratory of Integrated Optoelectronics [IOSKL2019KF05]
Ask authors/readers for more resources
Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing a trap-assisted gain (G) mechanism. However, the high-gain photodetectors benefitting from long carrier lifetime often possess slow response time (t) due to the inherent G-t tradeoff. Here, a light-driven junction field-effect transistor (LJFET), consisting of an n-type ZnO belt as the channel material and a p-type WSe2 nanosheet as a photoactive gate material, to break the G-t tradeoff through decoupling the gain from carrier lifetime is reported. The photoactive gate material WSe2 under illumination enables a conductive path for externally applied voltage, which modulates the depletion region within the ZnO channel efficiently. The gain and response time are separately determined by the field effect modulation and the switching speed of LJFET. As a result, a high responsivity of 4.83 x 10(3) A W-1 with a gain of approximate to 10(4) and a rapid response time of approximate to 10 mu s are obtained simultaneously. The LJFET architecture offers a new approach to realize high-gain and fast-response photodetectors without the G-t tradeoff.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available