Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 2, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201900975
Keywords
2D materials; asymmetric contact; dipole coupling; ferroelectrics; gate-tunable diodes
Funding
- National Natural Science Foundation of China [61390502, 61505033, 21825103]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [51521003]
- National Postdoctoral Science Foundation of China [2017M621254, 2018T110280]
- Heilongjiang Provincial Postdoctoral Science Foundation [LBH-TZ1708]
- Self-Planned Task of State Key Laboratory of Robotics and System (HIT) [SKLRS201607B]
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology [2017KM003]
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Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D alpha-In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the alpha-In2Se3 based ferroelectric diode can reach up to 2.5 x 10(3). These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics.
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