Journal
NANO ENERGY
Volume 68, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2019.104299
Keywords
CsF; Heavy alkali; PDT; CIGS; Grain boundary; V-oc loss
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Funding
- Japan Society for the Promotion of Science, Japan [18F18358]
- Private University Research Branding Project from Ministry of Education, Culture, Sports, Science, and Technology
- Grants-in-Aid for Scientific Research [18F18358] Funding Source: KAKEN
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Heavy alkali metal treatment is a key factor to approach high efficiency in Cu(In, Ga)Se-2 (CIGS) solar cells. Here, we show that the Cs-induced surface modification on CIGS thin-film solar cells, especially on grain boundary reconstruction generated from cesium fluoride post-deposition treatment (CsF-PDT). The CsInSe2 phase can be synthesized by CsF-PDT process without extra assistant species, and specifically favors grain boundaries (GBs), which was further characterized by FE-EPMA, TEM, and SIMS analysis. The Cs-contained GBs may both create the valence-band downshift and conduction-band upward. By controlling the Cs-contained layer thickness and modifying absorber, the spike at conduction-band can be overcome by tunneling while remaining high valence-band downshift to suppress the GBs recombination. The efficiency was improved from 15.1 to 18.3% after CsF-PDT; the voltage loss of E-g/q-V-oc was down below 0.4 V. Those improvements are mainly contributed from the grain boundary reconstruction at the junction area using CsF-PDT to reduce the recombination.
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