Related references
Note: Only part of the references are listed.Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
Dapeng Wang et al.
MATERIALS (2018)
Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture
Po Tsun Liu et al.
SCIENTIFIC REPORTS (2018)
Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States
Hyeon-Jun Lee et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Effect of illumination on the hump phenomenon in I-V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress
Yong-Jung Cho et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor
Hyeon-Jun Lee et al.
SCIENTIFIC REPORTS (2017)
Impact of transient currents caused by alternating drain stress in oxide semiconductors
Hyeon-Jun Lee et al.
SCIENTIFIC REPORTS (2017)
The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
Yeonwoo Shin et al.
SCIENTIFIC REPORTS (2017)
Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress
Jianwen Yang et al.
APPLIED PHYSICS LETTERS (2017)
Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors
Yu-Ching Tsao et al.
APPLIED PHYSICS LETTERS (2017)
Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress
Jungmin Lee et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress
Hwarim Im et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Nanomaterials in transistors: From high-performance to thin-film applications
Aaron D. Franklin
SCIENCE (2015)
A Short-Channel TFT of Amorphous In-Ga-Zn-O Semiconductor Pixel Structure With Advanced Five-Mask Process
Joon-Young Yang et al.
IEEE ELECTRON DEVICE LETTERS (2014)
A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization
Chan-Yong Jeong et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor
Ming-Yen Tsai et al.
APPLIED PHYSICS LETTERS (2013)
High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
Ming-Yen Tsai et al.
APPLIED PHYSICS LETTERS (2013)
Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process
Sang Hyun Ryu et al.
ECS SOLID STATE LETTERS (2012)
Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths
Mallory Mativenga et al.
APPLIED PHYSICS LETTERS (2011)
Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors
John F. Conley
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2010)
Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors
Kenji Nomura et al.
APPLIED PHYSICS LETTERS (2009)
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2008)
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A. Suresh et al.
APPLIED PHYSICS LETTERS (2008)
Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors
Ching-Fang Huang et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Hump characteristics and edge effects in polysilicon thin film transistors
A. Valletta et al.
JOURNAL OF APPLIED PHYSICS (2008)
High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Minkyu Kim et al.
APPLIED PHYSICS LETTERS (2007)
Share Paper
