Journal
SCIENTIFIC REPORTS
Volume 9, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-019-48552-z
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Funding
- DGIST Research and Development Program of the Ministry of Science, ICT, and Future Planning [19-NT-01]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [NRF-2018R1D1A1B07041075]
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The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional needle, a shallow (similar to 0.2 eV) and narrow (<0.1 eV), defect state near the conduction band minimum (CBM). This is also discussed in terms of the dual current path caused by leakage current in the channel edge.
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