Journal
MATERIALS
Volume 12, Issue 23, Pages -Publisher
MDPI
DOI: 10.3390/ma12233953
Keywords
single crystal diamond; Homoepitaxy growth; 300 torr
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Funding
- National Key R&D Program of China [2018YFB0406501]
- Key Basic Research Projects of Shandong Province Natural Science Foundation [ZR2017ZA010]
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The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relationships among the chamber pressure, substrate surface temperature, and system microwave power were investigated. The surface morphology evolution with a series of different concentrations of the gas mixture was observed. It was found that a single lateral crystal growth occurred on the substrate edge and a systemic step flow rotation from the [100] to the [110] orientation was exhibited on the surface. The Raman spectroscopy and High Resolution X-Ray Diffractometry (HRXRD) prove that the homoepitaxy part from the original HPHT substrate shows a higher quality than the lateral growth region. A crystal lattice visual structural analysis was applied to describe the step flow rotation that originated from the temperature driven concentration difference of the C2H2 ion charged particles on the SCD center and edge.
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