Journal
MATERIALS
Volume 12, Issue 15, Pages -Publisher
MDPI
DOI: 10.3390/ma12152492
Keywords
multilayers; nitrogen doping; single crystal diamond; X-ray topography; dislocation; mechanical property
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Funding
- National Key Research and Development Program of China [2016YFE0133200]
- European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme [734578]
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In the present investigation, a nitrogen-doped multilayer homoepitaxial single crystal diamond is synthesized on a high-pressure high temperature (HPHT) Ib-type diamond substrate using the microwave plasma chemical vapor deposition (MPCVD) method. When 0.15 sccm of nitrogen was added in the gas phase, the growth rate of the doped layer was about 1.7 times that of the buffer layer, and large conical and pyramidal features are formed on the surface of the sample. Raman mapping and photoluminescence imaging of the polished cross sectional slice shows a broadband emission, with a characteristic zero phonon line (ZPL) at 575 nm in the doped layers, and large compressive stress was formed in the nitrogen-doped layers. X-ray topography shows that the defects at the interface can induce dislocation. The pyramid feature is formed at the defect, and more nitrogen-related defects are formed in the pyramid region. Thin nitrogen-doped multilayers were successfully prepared, and the thickness of the nitrogen-doped and buffer layers was about 650 nm each. The indentation measurements reveal that the thin nitrogen-doped multilayers are ultra-tough (at least similar to 22 MPa m(1/2)), compared to the Ib-type HPHT seed substrate (similar to 8 MPa m(1/2)) and the unintentionally doped chemical vapor deposition (CVD) single crystal diamond (similar to 14 MPa m(1/2)).
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