4.3 Article

Exciton states in InGaAsP/InP core-shell quantum dots under an external electric field

Journal

JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume 18, Issue 4, Pages 1243-1250

Publisher

SPRINGER
DOI: 10.1007/s10825-019-01404-5

Keywords

Core-shell quantum dot; Exciton binding energy; Electric field

Funding

  1. National Natural Science Foundation of China [61674096]
  2. Shandong Province Natural Science Foundation [ZR2014FM011, ZR2019PA010]
  3. Open Project of State Key Laboratory of Functional Materials for Informatics [SKL201307]

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The effect of an external electric field on the exciton states of InGaAsP/InP core-shell quantum dots is investigated through the variational method. The effect of the shell thickness, core radius, electric field strength, and material components on the exciton states are analyzed in detail. The numerical results show that the electron and hole energies decrease as the shell thickness or core radius is increased. The Bohr radius is a nonmonotonic function of the shell thickness or core radius, and the change of the exciton binding energy is nonlinear as the shell thickness or core radius is increased. With increasing electric field strength, the Bohr radius increases while the exciton binding energy decreases. The exciton binding energy decreases (increases) as the Ga (As) component is increased.

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