Journal
NATURE COMMUNICATIONS
Volume 10, Issue -, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-019-12963-3
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Funding
- European Graphene Flagship Project [696656, 785219]
- EPSRC [EP/P026850/1, EP/P033369, EP/M013812]
- European Union's Horizon 2020 research and innovation programme under ITN Spin-NANO Marie Sklodowska-Curie grant [676108]
- European Union's Horizon 2020 research and innovation programme under ITN 4PHOTON Marie Sklodowska-Curie grant [721394]
- DFG [TRR 142]
- EPSRC [EP/P033431/1, EP/P033369/1, EP/M013812/1, EP/P026850/1] Funding Source: UKRI
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Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities having the optical mode volume close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe2. We observe a photoluminescence enhancement exceeding 10(4) compared with WSe2 placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10(3). Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors.
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