Journal
NATURE COMMUNICATIONS
Volume 10, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-019-11920-4
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Funding
- Horizon 2020 research and innovation programme [8204023]
- Spanish Government [TEC2014-53727-C2-1-R]
- Comunidad Valenciana Government [PROMETEOII/2014/059]
- EPSRC [EP/P029892/1]
- ERC [725920]
- Salvador de Madariaga programme of the Spanish Government [PRX17/00186]
- Juan de la Cierva programme (MINECO, Spain) [IJCI-2015-25799]
- programme Atraccio de Talent, VLC-CAMPUS of the University of Valencia [UV-INV-PREDOC17F1-539274]
- Tirant III cluster of the Servei d'Informatica of the University of Valencia [vlc82]
- Royal Society
- EPSRC [EP/L017008/1] Funding Source: UKRI
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Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
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