Journal
NATURE COMMUNICATIONS
Volume 10, Issue -, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-019-11506-0
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Funding
- National Key Research and Development Program of China [2017YFB0206101]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDPB12]
- National Natural Science Foundation of China [61504157]
- Hundred Talents Program (Chinese Academy of Sciences)
- Shanghai Pujiang Talent Program [18PJ1411100]
- Deutsche Forschungsgemeinschaft [SFB 917]
- Julich-Aachen Research Alliance (JARA-HPC project) [jara0033]
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Doping is indispensable to tailor phase-change materials (PCM) in optical and electronic data storage. Very few experimental studies, however, have provided quantitative information on the distribution of dopants on the atomic-scale. Here, we present atom-resolved images of Ag and In dopants in Sb2Te-based (AIST) PCM using electron microscopy and atom-probe tomography. Combing these with DFT calculations and chemical-bonding analysis, we unambiguously determine the dopants' role upon recrystallization. Composition profiles corroborate the substitution of Sb by In and Ag, and the segregation of excessive Ag into grain boundaries. While In is bonded covalently to neighboring Te, Ag binds ionically. Moreover, In doping accelerates the crystallization and hence operation while Ag doping limits the random diffusion of In atoms and enhances the thermal stability of the amorphous phase.
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