A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio

In this paper, using numerical simulations, analytical modeling and experimental data, we validate the applicability of the transconductance-to-current ratio (g(m)/ID) derivative (d(g(m)/I-D)/dV(G)) method for extracting the threshold voltage (VTH) in junctionless (JL) MOSFETs and show its advantages over the commonly-used transconductance derivative (or double derivative of drain current) method (dg(m)/dV(G)equivalent to d(2)I(D)/dV(G)(2)). It is shown that, although both methods are based on the same theoretical V-TH-criterion, the d(g(m)/I-D)/dVG method is more accurate than the d(2)I(D)/dV(G)(2) method due to its lesser sensitivity to the gate-voltage-dependent mobility and series resistance parasitic effects, being particularly important in JL MOSFETs.