Structural, optical and electrical properties of the Zn doped MoO3 deposited on porous silicon

This study presents the preparation process of porous silicon substrates and the deposed thin film of 5%Zn doped MoO3 on porous silicon. The first part covers many techniques used to characterize porous silicon substrates. It examines the photoluminescence spectra analysis to study the etching time effect on the PL intensity, and the UV-vis analysis to find the band gap of the prepared porous silicon substrates with different etching time. The second part treats several techniques for studying the etching time effect on the structural, electrical, optical properties of the 5%Zn doped MoO3 thin film. X-ray diffraction (XRD) was used to study the structure of the samples, Fourier transform infrared spectroscopy (FTIR) was used to determine the functional groups. While Photoluminescence spectra analysis, Photocatalytic activity test, and Electrochemical impedance spectroscopy (EIS) were used to study the electrical properties. By increasing the time etching, the structure crystallization was ameliorated, the band gap was decreased from 2.96 to 2.75 eV, a visible optical absorption was detected at 450 to 500 nm range which increased from 88 to 92% and the electrical conductivity was increased by ten times from 6.28 x 10(-5) to 6.06 x 10(-4) Omega(-1).cm(-1). (C) 2019 Published by Elsevier B.V.