Uniformity investigation of pHEMTs small-signal parameters for pre and post multilayer fabrication in 3D MMICs

The main aim of this paper is to investigate the uniformity of pHEMTs small-signal parameters before and after multilayer fabrication in 3D MMICs. Seven samples of pre-and post-multilayer fabricated pHEMTs at different representative locations to reflect the degree of consistency. This study deals with the fabrication, measurement, simulation, and comparison of both sample in form of means and slandered deviation. On wafer scattering (S-) parameter measurement has been accomplished to investigate the small signal equivalent circuit parameters up to 50 GHz. The main finding was observed that all parameters are increased after multilayer fabrication except the transconductance and the parasitic inductances. The employment of the 3D-MMIC technology does not induce any evident extinction of the pHEMTs performance utilizing seven different samples of pre-and post-multilayer fabrication.