4.8 Article

Room-Temperature Spin-Orbit Torque from Topological Surface States

Journal

PHYSICAL REVIEW LETTERS
Volume 123, Issue 20, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.123.207205

Keywords

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Funding

  1. NSF [1611570]
  2. Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS)
  3. U.S. Army Research Office MURI program [W911NF-16-1-0472, W911NF-15-1-10561]
  4. Spins and Heat in Nanoscale Electronic Systems (SHINES) Center - U.S. Department of Energy (DOE) [DE-SC0012670]
  5. Function Accelerated nanoMaterial Engineering (FAME) Center
  6. Semiconductor Research Corporation (SRC) program - Microelectronics Advanced Research Corporation (MARCO)
  7. Semiconductor Research Corporation (SRC) program - Defense Advanced Research Projects Agency (DARPA)
  8. National Key Research and Development Program of China [2017YFA0206200]
  9. NSFC of China [11434014]
  10. Div Of Electrical, Commun & Cyber Sys
  11. Directorate For Engineering [1611570] Funding Source: National Science Foundation

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Spin-momentum locked surface states in topological insulators (TIs) provide a promising route for achieving high spin-orbit torque (SOT) efficiency beyond the bulk spin-orbit coupling in heavy metals (HMs). However, in previous works, there is a huge discrepancy among the quantitative SOTs from TIs in various systems determined by different methods. Here, we systematically study the SOT in the TI(HM)/Ti/CoFeB/MgO systems by the same method, and make a conclusive assessment of SOT efficiency for TIs and HMs. Our results demonstrate that TIs show more than one order of magnitude higher SOT efficiency than HMs even at room temperature, at the same time the switching current density as low as 5.2 x 10(5) A cm(-2) is achieved with (Bi1-xSbx)(2)Te-3 . Furthermore, we investigate the relationship between SOT efficiency and the position of Fermi level in (Bi1-xSbx)(2)Te-3 , where the SOT efficiency is significantly enhanced near the Dirac point, with the most insulating bulk and conducting surface states, indicating the dominating SOT contribution from topological surface states. This work unambiguously demonstrates the ultrahigh SOT efficiency from topological surface states.

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