4.6 Article

Synaptic metaplasticity of protonic/electronic coupled oxide neuromorphic transistor

Journal

ORGANIC ELECTRONICS
Volume 74, Issue -, Pages 304-308

Publisher

ELSEVIER
DOI: 10.1016/j.orgel.2019.07.028

Keywords

Neuromorphic device; Synaptic metaplasticity; Protonic/electronic coupling; Neuromorphic transistor

Funding

  1. Zhejiang Provincial Natural Science Foundation of China [LR18F040002]
  2. Program for Ningbo Municipal Science and Technology Innovative Research Team [2016B10005]
  3. Key Research Program of Frontier Sciences, Chinese Academy of Sciences [QYZDB-SSW-JSC047]
  4. CAS Interdisciplinary Innovation Team

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In recent years, neuromorphic computing has attracted close attention. Simulating synaptic plasticity on neuromorphic devices is an important step in hardware based neuromorphic computing. Metaplasticity is a higher-order form of synaptic plasticity. It can regulate the ability of synapse to generate plasticity. Here, chitosan based electrolyte gated protonic/electronic coupled indium-tin-oxide (ITO) neuromorphic transistors are fabricated. The transistor exhibits unique interfacial ionic coupling effects and interfacial electrochemical doping abilities. Thus, metaplastic excitatory postsynaptic current and metaplastic paired-pulses response are achieved on the chitosan gated ITO neuromorphic transistor. Transitions between paired-pulse facilitation and paired-pulse depression are observed. In addition, metaplastic facilitation of long-term potentiation and metaplastic inhibition of long-term potentiation are also successfully imitated. The present work may expand the applications of solid-state electrolyte gated transistors in neuromorphic platforms.

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