Journal
NATURE
Volume 576, Issue 7785, Pages 80-+Publisher
NATURE RESEARCH
DOI: 10.1038/s41586-019-1779-x
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Funding
- Army Research Office [W911NF-17-1-0312]
- Asian Office of Aerospace RD [FA2386-18-1-4086]
- Intel Corp.
- Welch Foundation [F-2018-20190330]
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Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics owing to their strong exciton-photon interaction(1,2) and their ability to be engineered and integrated into devices(3). Here we take advantage of these properties to engineer an efficient lasing medium based on direct-bandgap interlayer excitons in rotationally aligned atomically thin heterostructures(4). Lasing is measured from a transition-metal dichalcogenide heterobilayer (WSe2-MoSe2) integrated in a silicon nitride grating resonator. An abrupt increase in the spatial coherence of the emission is observed acrossthe lasing threshold. The work establishes interlayer excitons in two-dimensional heterostructures as a gain medium with spatially coherent lasing emission and potential for heterogeneous integration. With electrically tunable exciton-photon interaction strengths(5) and long-range dipolar interactions, these interlayer excitons are promising for application as low-power, ultrafast lasers and modulators and for the study of many-body quantum phenomena(6).
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