4.8 Article

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride

Journal

NANO LETTERS
Volume 19, Issue 12, Pages 8581-8589

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b03114

Keywords

Two-dimensional materials; grain boundary; quasi-bicrystal nanowelding; hexagonal boron nitride; partial dislocation; faceting

Funding

  1. National Natural Science Foundation of China [51772265, 51761165024, 61721005]
  2. National Basic Research Program of China [2015CB921004]
  3. Zhejiang Provincial Natural Science Foundation [D19E020002]
  4. 111 project [B16042]

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Precise control and in-depth understanding of the interfaces are crucial for the functionality-oriented material design with desired properties. Herein, via modifying the long-standing bicrystal strategy, we proposed a novel nanowelding approach to build up interfaces between two-dimensional (2D) materials with atomic precision. This method enabled us, for the first time, to experimentally achieve the quasi-full-parameter-space grain boundaries (GBs) in 2D hexagonal boron nitride (h-BN). It further helps us unravel the long-term controversy and confusion on the registry of GBs in h-BN, including (i) discriminate the relative contribution of the strain and chemical energy on the registry of GBs; (ii) identify a new dislocation core-Frank partial dislocation and four new antiphase boundaries; and (iii) confirm the universal GB faceting. Our work provides a new paradigm to the exploitation of structural-property correlation of interfaces in 2D materials.

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