Journal
NANO LETTERS
Volume 19, Issue 11, Pages 8149-8154Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b03424
Keywords
Infrared spectroscopy; localized surface plasmon resonance; doped semiconductor nanocrystals
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Funding
- National Science Foundation (NSF)
- NASCENT, an NSF ERC [EEC-1160494]
- University of Texas at Austin MRSEC [DMR-1720595]
- NSF MRI grant [CBET-1624659]
- Graduate Research Fellowship [DGE-1610403]
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The optical extinction coefficients of localized surface plasmon resonance (LSPR) in doped semiconductor nanocrystals (NCs) have intensities determined by the density and damping mechanisms of free charge carriers. We investigate the dependence of the extinction coefficient of tin-doped indium oxide (ITO) NCs on size and dopant concentration and find extinction coefficients as high as 56.6 mu m(-1) in the near-infrared for 20 nm diameter ITO NCs with 7.5 atomic% Sn. We find ITO NCs to be more efficient infrared light absorbers than metal nanoparticles or molecular dyes. We also find the intensive, volume normalized extinction coefficient increases significantly with NC doping and NC diameter, but only up to the point of saturation in both cases. We qualitatively analyze trends in LSPR peak position and width to explain the effect of doping and size on extinction.
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