Journal
MICROELECTRONICS RELIABILITY
Volume 102, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2019.113410
Keywords
Chemical vapor deposition; Multilayer hexagonal boron nitride; Resistive switching; Metallic substrate; Conductive filament
Funding
- Young 1000 Global Talent Recruitment Program of the Ministry of Education of China
- Ministry of Science and Technology of the People's Republic of China [BRICS2018-211-2DNEURO]
- National Natural Science Foundation of China [61502326, 41550110223, 11661131002, 61874075]
- Jiangsu Government [BK20150343]
- Ministry of Finance of China [SX21400213]
- Young 973 National Program of the Chinese Ministry of Science and Technology [2015CB932700]
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Chemical vapor deposition (CVD) is one of the most common techniques to grow large-area hexagonal boron nitride (h-BN). However, the substrate on which the h-BN is grown plays an important role in the electrical properties of this insulating material. The high temperature used during the CVD process produces the polycrystallization of the metallic substrates, which may modify the electrical properties of the h-BN/metal from one grain to another. In this work, we compare the electrical properties of CVD-grown multilayer h-BN on three different metallic substrates: Pt, Cu and Fe. This study reveals that the properties of h-BN based devices variate remarkably from one grain to another. On the contrary, this behavior is not relevant for when using Cu and Fe. On the other hand, we have also studied the resistive switching behavior in Au/Ti/h-BN/Pt, Au/Ti/h-BN/Cu, and Au/Ag/h-BN/Fe devices, and demonstrated low variability when they are grown on the same metallic grain.
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