4.7 Review

A review on nanomaterial-based field effect transistor technology for biomarker detection

Journal

MICROCHIMICA ACTA
Volume 186, Issue 11, Pages -

Publisher

SPRINGER WIEN
DOI: 10.1007/s00604-019-3850-6

Keywords

Biosensor; Semiconductor nanostructures; 1D materials; 2D materials; Silicon; Dichalcogenides; Analytical performance; Nucleic acid; Protein; Cancer

Funding

  1. ARO [W911NF-11-1-0024, W911NF-09-1-0218]
  2. National Institute of General Medical Sciences of the National Institutes of Health [P20GM121299]
  3. NSF [EPS-1003907, OIA-1458952]

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Field effect transistor (FET) based sensors have attractive features such as small size, ease of mass production, high versatility and comparably low costs. Over the last decade, many FET type biosensors based on various nanomaterials (e.g. silicon nanowires, graphene, and transition metal dichalcogenides) have been developed to detect various classes of biomolecular targets due to their integration into portable and rapid test systems, both for use in the clinical lab and in point-of-care testing. This review (with 197 refs.) starts with an introduction into the specific features of FET biosensor technology. This is followed by a description of the essentials of methods for immobilization of recognition elements. The next section discusses the progress that has been made in FET based biosensors using semiconducting nanostructures composed of silicon, graphene, metal oxides, and transition metal dichalcogenides. A further section is devoted to microfluidic systems combined with FET biosensors. We then emphasize the biosensing applications of these diagnostic devices for analysis of clinically relevant biomarkers, specifically to sensing of neurotransmitters, metabolites, nucleic acids, proteins, cancer and cardiac biomarkers. Two tables are presented which summarize advances in applications of 1D and 2D nanomaterial-based FETs for biomarker sensing. A concluding section summarizes the current status, addresses current challenges, and gives perspective trends for the field. Graphical abstract Field effect transistor devices based on the use of 1D and 2D semiconductor nanostructures (so called nano-FETs) are making use of materials including silicon nanowires, graphene, zinc oxide, indium oxide, titanium oxide, and molybdenum disulfide that are further modified with recognition elements for biosensing application.

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