Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 101, Issue -, Pages 95-102Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.05.028
Keywords
Gallium-doped zinc oxide; Atomic layer deposition; Transparent conducting oxide; Rapid thermal annealing; Light emitting diode
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Funding
- Hungarian National Science Fund OTKA [PD 116579]
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Ga doped ZnO films were deposited at low temperature with atomic layer deposition at different temperatures with the novel precursor, hexakis (dimethylamino)gallium. The ZnO films prepared at 300 degrees C on GaN substrates are epitaxial, but the Ga doping deteriorates the crystallinity: the doped films are oriented polycrystalline. The films deposited at lower temperatures are polycrystalline in all cases. Post deposition annealing procedures were applied which improved the crystallinity of the layer and increased the mobility of the films.
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