Low temperature sintering mechanism for Li2Mg3SnO6 microwave dielectric ceramics

Low-fired Li2Mg3SnO6 ceramics were fabricated via the conventional solid-state reaction route, and the effects of LiF-doping on their sintering mechanism and microwave dielectric properties were investigated. Sintering temperature of Li2Mg3SnO6 ceramics were effectively reduced to 900 degrees C due to the substitution of F- for O-2, which could cause weakening of oxygen bond strength induced reduced the intrinsic sintering temperature and facilitates the diffusion process. Low-fired ceramics inhibited volatilization of Li and improved relative density. Well-densified Li2Mg3SnO6-4 wt% LiF ceramics were obtained with optimum microwave dielectric properties of epsilon(r) = 12.3, Q x f = 96280 GHz and tau(f) = -40.7 ppm/degrees C at 900 degrees C. Such samples were compatible with Ag electrodes and suitable for LTCC applications.