Journal
MATERIALS LETTERS
Volume 254, Issue -, Pages 178-181Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2019.07.065
Keywords
Ag doped Zn2SnO4/SnO2; Formaldehyde; Sensors; Hollow nanospheres; Semiconductors
Funding
- National Natural Science Foundations of China [11864034, 51562035]
- Scientific Research Project of Gansu Province [18JR3RA089, 17JR5RA072]
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Zn2SnO4/SnO2 and Ag doped Zn2SnO4/SnO2 hollow nanospheres were successfully prepared by one-step hydrothermal reaction. Their morphology and element composition were characterized by SEM, TEM, XRD, BET and XPS. Gas sensing performance results show that the Ag doped Zn2SnO4/SnO2 sensor exhibited better performance to 50 ppm formaldehyde including higher response (60) and lower optimum operating temperature (140 degrees C) compared with pure Zn2SnO4/SnO2. The lowest detectable concentration is 5 ppm. It demonstrated that Ag doping effectively improves the gas sensitive properties to detect low concentration of formaldehyde gas. (C) 2019 Elsevier B.V. All rights reserved.
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