Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 75, Issue 10, Pages 817-820Publisher
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.75.817
Keywords
Graphene; PMMA; MIBK; Field-effect transistor
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Funding
- Midcareer Researcher Program through a National Research Foundation - Korea Government (MSIP) [2017R1A2B4009177]
- Human Resources Program in Energy Technology through a Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea Government (MOTIE) [20184030202220]
- National Research Foundation of Korea [2017R1A2B4009177] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we proposed a fast and effective technique to remove residual poly(methyl methacrylate) (PMMA) after its use as a supporting layer for transferring graphene films on a large scale with high productivity. We utilized a methyl isobutyl ketone (MIBK) solution, which is commonly used to develop PMMA layers, for an e-beam lithography process. This was done because MIBK molecules tend to inflate the PMMA layer, weakening the link between PMMA and the graphene surface. Field-effect transistors were fabricated on the transferred graphene, with which we addressed the Dirac points and their carrier motilities. We observed that due to the reduced p-doping effects, the Dirac points were located closer to the zero-gate bias compared to those obtained using the acetone treatment. Finally, the average device mobility reached 5400 and 3900 cm(2)/Vs for holes and electrons, respectively. These values are more than five times the values obtained using the conventional acetone treatment.
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