Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 10, Issue 20, Pages 6151-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b02620
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Funding
- China Scholarship Council (CSC) [201706340139]
- National Key Foundation of China, Department of Science and Technology [2017YFA0204904, 2016YFA0200604]
- National Natural Science Foundation of China (NSFC) [11620101003, 11704363]
- U.S. Department of Energy [DE-SC0014429]
- DOE Office of Biological and Environmental Research
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The Shockley-Read-Hall (SRH) model, in which the deep trap defect states in the band gap are proposed as nonradiative electron-hole (e-h) recombination centers, has been widely used to describe the nonradiative e-h recombination through the defects in semiconductor. By using the ab initio nonadiabatic molecular dynamics method, we find that the SRI-I model fails to describe the e-h recombination behavior for defects in 2D monoelemental material such as monolayer black phosphorus (BP). Through the investigation of three intrinsic defects with shallow and deep defect states in monolayer BP, it is found that, surprisingly, none of these defects significantly accelerates the e-h recombination. Further analysis shows that because monolayer BP is a monoelemental material, the distinct impurity phonon, which often induces fast e-h recombination, is not formed. Moreover, because of the flexibility of 2D material, the defects scatter the phonons present in pristine BP, generating multiple modes with lower frequencies compared with the pristine BP, which further suppresses the e-h recombination. We propose that the conclusion can be extended to other monoelemental 2D materials, which is important guidance for the future design of functional semiconductors.
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