4.8 Article

Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing

Journal

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 10, Issue 21, Pages 6545-6550

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b02488

Keywords

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Funding

  1. National Research Foundation of Korea (NRF) - Korean government [2018M1A3A3A02065974, NRF-2012M3A6A7054861]
  2. Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry & Energy (MOTIE), Republic of Korea [20163010012450, 20173010013340]
  3. National Research Foundation of Korea [2018M1A3A3A02065974] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2 _based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.

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