Illustrating the Shell Thickness Dependence in Alloyed Core/Shell Quantum-Dot-Based Light-Emitting Diodes by Impedance Spectroscopy

Colloidal quantum dots (QDs) are talented materials and have been extensively investigated in the field of photonics and optoelectronics due to their size-dependent optical properties. The core/shell structure of QDs with a wide band gap shell has been adopted for obtaining stable emission and high photoluminescent (PL) quantum efficiency. However, when employed in active devices such as light-emitting diodes (LEDs), the thick-shell structure of QDs may impede the transportation of carriers, thus deteriorating the device performance. In this work, the effect of the shell thickness of CdSe/ZnS QDs on the device performance is systematically studied through impedance spectroscopy, by constructing the electron-only symmetric device architecture. It is found that the evolution of capacitance in the symmetric device under applied voltage reflects the charge accumulation within the device and predicts the LED performance. The lowest capacitance is evaluated in the symmetric device containing QDs with a medium shell size of 2.1 nm, showing improved performance in the LED with the highest luminance and current efficiency of 26 370 cd/m(2) and 8.3 cd/A, respectively.