Exploration of organic additives-assisted vanadium pentoxide (V2O5) nanoparticles for Cu/n-V2O5/p-Si Schottky diode applications

The organic additives-assisted vanadium pentoxide (OA:V2O5) nanoparticles (NPs) were prepared by a facile co-precipitation method and their structural, optical, and electrical properties have been analyzed. The orthorhombic crystal structure was observed in the X-ray diffraction pattern of pure vanadium pentoxide (V2O5) NPs. The XRD patterns of OA: V2O5 NPs reveals that the crystallite size of the V2O5 NPs reduced without any change in the crystal structure. The SEM images showed that organic additives strongly influence on the surface morphology of the V2O5 NPs. The TEM analysis revealed that the acid-treated V2O5 NPs are relatively smaller in size compared to without acid-treated V2O5 NPs. From the optical measurements, an increase in optical band gap was observed for OA:V2O5 NPs. The dc electrical analysis revealed that the increased dc electrical conductivity is due to the incorporation of various organic additives (OA) in the V2O5 NPs. The electrical parameters such as ideality factor (n), barrier height (CYRILLIC CAPITAL LETTER EFB), series resistance (R-s), and interface properties have been analyzed for the Cu/n-V2O5/p-Si Schottky diodes (SBDs) by the J-V, Cheung's and Norde method. The barrier height value is increased for Cu/OA:V2O5/p-Si SBDs.