Highly bendable asymmetric resistive switching memory based on zinc oxide and magnetic iron oxide heterojunction

To block sneak current in a crossbar array, we propose asymmetric resistive switching device based on zinc oxide (ZnO) and magnetic iron oxide (Fe2O3) heterojunction, which has highly bendable performance with low power consumption. The ZnO/Fe2O3 heterojunction based active layer is fabricated on indium tin oxide (ITO). Polyethylene terephthalate (PET) substrate through spin coater and silver (Ag) is used as top electrode. Particularly, the active layer is protected by the magnetic force of Fe2O3 covered on ZnO, and hence, it can be bent under 1 mm diameter. The proposed memory is operated at low voltage of +/- 1 V with reading voltage of +/- 0.10204 V. In forward current, the fabricated device has high resistance state (HRS) of similar to 16.17 M Omega and low resistance state (LRS) of similar to 179.41 k Omega, respectively, at read voltage of + 0.10204 V, and R-off/R-on ratio is recorded as similar to 90.1. In reverse current, the HRS of similar to 15.69 M Omega and LRS of similar to 9.23 M Omega are recorded at read voltage of -0.10204 V, and R-off/R-on ratio is similar to 1.6976, which insure that the proposed asymmetric memory device helps to reduce sneak current problem.