Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 819, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2019.153027
Keywords
Bi2Te3 thin film; Thermal evaporation; Two-step process; Single source; Thermoelectric properties
Categories
Funding
- National Natural Science Foundation of China [11604212]
- Shenzhen Key Lab Fund [ZDSYS 20170228105421966]
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Bismuth telluride (Bi2Te3) is an efficient thermoelectric material, and fabricating Bi2Te3 thin films with good thermoelectric properties is a prerequisite to realizing the potential of these materials in micro-device application. Controllable content deposition and low-negative thermal treatment are the two main challenges in preparing high-performance thin films. In this study, stoichiometric Bi2Te3 thin films were successfully fabricated via the two-step thermal vapor process with a single evaporation source. Then, the rapid thermal process, which could avoid component loss, was used to further improve the crystallinity and thermoelectric properties of thin films. The Seebeck coefficient of Bi2Te3 thin films clearly increased after rapid heat treatment, leading to enhanced power factor and good flexibility. Such thin films exhibited low thermal conductivity due to their nano-sized grains, resulting in high ZT of flexible Bi2Te3 thin films. (C) 2019 Elsevier B.V. All rights reserved.
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