Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 59, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab514e
Keywords
-
Categories
Funding
- Japan Society for the Promotion of Science (JSPS) [JP17H04925]
Ask authors/readers for more resources
The heterogeneous integration of an LNOI waveguide device on a mature Si platform is interesting for the creation of a future high density and multi-functional platform. This paper reports the fabrication of a bent LNOI waveguide on Si substrate using surface activated bonding with a Si nanoadhesive layer and post-bond ultra-precision cutting at room temperature. This bonding method demonstrates the sufficient bond strength between an LN wafer and thermally grown SiO2 to withstand ductile-mode cutting for waveguide fabrication. In this work, the width, height, and bent radius of the ridged LNOI waveguide on Si substrate were approximately 5, 2.5, and 300 mu m, respectively. These room-temperature bonding and cutting methods are expected to fabricate various heterogenous devices with a large coefficient of thermal expansion mismatch between dissimilar materials, not just LNOI/Si waveguide devices. (C) 2019 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available