Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 11, Pages 4535-4545Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2933615
Keywords
Dielectrics; Electric breakdown; Reliability; Integrated circuit modeling; Transient analysis; Current measurement; Voltage measurement; Circuit failure; clustering model; hard breakdown (HBD); non-Poisson area scaling; nonuniformity; post-breakdown (BD); product failure; progressive breakdown (PBD); reliability; soft breakdown (SBD); time-dependent dielectric breakdown (TDDB); variability; variation
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Device dimension scaling and process complexity have revealed new phenomena such as post-breakdown (BD) and variability issues in advanced technology nodes. Coupling of the first BD phenomena and their methodologies discussed in part I with the development of post-BD methodologies allows engineers to use device stress-data to accurately predict the product failure lifetime. The statistical modeling and new advances in understanding the root cause of variability issues have mitigated these seemingly uncontrollable catastrophes so that the scaling of the advanced technology process can continue its successful path forward. These two important aspects of dielectric BD will be reviewed in part II.
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