Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 10, Pages 4373-4379Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2936912
Keywords
Acetone sensor; AlGaN/GaN; gas sensor; high electron mobility transistor (HEMT); WO3
Funding
- Beijing Delft Institute of Intelligent Science and Technology
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A suspended AlGaN/GaN high electronmobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300 degrees C) increased the sensitivity to up to 25.7% and drain current change IDS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 degrees C to 300 degrees C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.
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