Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 10, Pages 4235-4242Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2931081
Keywords
Power metal-oxide-semiconductor fieldeffect transistor (MOSFET); single-event burnout (SEB); single-event effect (SEE); single-event gate rupture (SEGR)
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Experimental characterization of the damage induced to SiC power MOSFETs by heavy-ion irradiation is presented as a premise to a finite element simulation study aimed at gaining an insight into the physics of damage formation. Thanks to the new experimental setup, which is capable of accurately measuring the time evolution of the gate and drain leakage currents during irradiation, we herein demonstrate that the gate of a SiC power MOSFET is damaged by heavy-ion irradiation at biasing drain voltages lower than 100 V, which is less than 10% of the nominal blocking voltage of the tested devices. The evolution of the gate and drain leakage currents during irradiation is explained considering that localized resistive paths due to damage sites are formed across the gate oxide. The results presented herein indicate the strong sensitivity of SiC powerMOSFETs to gate rupture even if the main concern in the literature addressed so far is the rupture of the drain structure due to single-event burnout.
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