Time-Controlled and FinFET Compatible Sub-Bandgap References Using Bulk-Diodes

This brief presents an innovative technique for precise reference generation based on digital-alike operation. The bias of pn-junctions is defined trough pulse timings, while respective PTAT and CTAT signals are sampled from the voltage-decay of a capacitor. The greatly simple structures offer intrinsic supply robustness and use charge sharing or addition, to achieve large reverse-bandgap levels. Here, we employ the bulk-to-substrate diode of any baseline process combined with charge-pump function, instead of BJT devices. Two different circuit ideas were designed in 16-nm FinFET, with ultra-low power requirements. The first version achieves an untrimmed 3 sigma-accuracy of +/- 0.82%, realizing 235-mV reference output down to 0.85-V supply. A second IP carries lowest complexity using a single diode only: it consumes 21 nA at 1680 mu m(2) active area, and provides larger levels of Vref similar to 370 mV at merely +/- 2.7 mV total spread from silicon data. Unlike prior art, the compact reverse bandgaps do not require typical analog structures, like resistors, matched biasing, or differential amplifiers.