Journal
IEEE SENSORS JOURNAL
Volume 19, Issue 20, Pages 9097-9104Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2019.2926367
Keywords
Chemical sensor; graphene oxide; QCM; SPR; LB thin films; NARX-ANN
Funding
- BAP: Research Foundation of Usak University [2018/MF002]
- UBATAM: Usak University, Scientific Analysis Technological Application and Research Center
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Graphene oxide (GO) Langmuir-Blodgett (LB) thin films were prepared to use as chemical sensor element. The properties of GO LB thin film layers were characterized via Quartz crystal microbalance (QCM) method. Selectivity of the sensor to various organic vapors was investigated by surface plasmon resonance (SPR) and QCM techniques. Fick's equations were used for calculating the diffusion coefficients (D) values of organic vapors. It was observed that chemical gas sensing characteristics of the GO film sensor shows a large response to some hazardous organic vapors. Then, by using experimental measurements that obtained during this process, NARX-ANN-based mathematical model of frequency shift of the quartz resonator was designed. The results of NARX-ANN verify the efficiency of the designed model.
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