Journal
IEEE SENSORS JOURNAL
Volume 19, Issue 20, Pages 9187-9193Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2019.2922250
Keywords
Germanium; MoS2; photovoltage; tunnel FET
Funding
- University Grant Commission (UGC), Government of India
Ask authors/readers for more resources
This paper presents a novel approach for the design of a waveguide-integrated photodetector that combines the advantage of atomically thin MoS2 tunnel FET (TFET) with infrared detection capability of Germanium (Ge). The Ge layer acting as a photogate for underlying TFET is optimized to have good optical confinement of guided mode traveling in the SOI rib waveguide. The low-power operation, effective gate control, low oFF-state current, and improved subthreshold characteristics of MoS2 TFET effectively enhance the detector performance for on-chip applications. Due to the high sensitivity of the TFET in the subthreshold region, an addition of the photovoltage to the gate voltage increases the band-to-band tunneling (BTBT) significantly, showing good photoresponse. The analytical and simulation results illustrate that at 1550 nm wavelength with an incident optical power intensity of 3 Wcm(-2), a maximum responsivity of 2700 AW(-1) and an ON-OFF ratio (I-ON/T-OFF) of 10(7) is obtained. The device shows good spectral sensitivity with a low dark current.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available