High-Performance Vertical β-Ga2O3 Schottky Barrier Diode With Implanted Edge Termination

This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical \beta -Ga2O3 Schottky barrier diode (SBD). With this ET, vertical \beta -Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance ( {R} _{ \mathrm{\scriptscriptstyle ON},\textrm {sp}} ) of 5.1 \text{m}\Omega \cdot \textrm {cm}<^>{\textrm {2}} at a lightly doped \beta -Ga2O3 layer with epitaxial thickness of 10\mu \text{m} , yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm(2). Combined with high forward current on/off ratio of 10(8) & x007E; 10(9), Schottky barrier height of 1.01 eV, and ideality factor of 1.05, vertical \beta -Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.