High-Gain Complementary Inverter Based on Corbino p-Type Tin Monoxide and n-Type Indium-Gallium-Zinc Oxide Thin-Film Transistors

The present work investigated the electrical characteristics of Corbino structure p-type tin monoxide (SnO) thin-film transistors (TFTs) and demonstrated a high-performance complementary logic inverter composed of Corbino p-type SnO and n-type indium-gallium-zinc oxide (IGZO) TFTs. Experimental data showed that the Corbino p-type SnO TFT exhibited an almost infinite output resistance beyond pinch-off in the outer drain condition. The observed phenomenon was mainly attributed to the scaling down of the effective channel width in proportion to the effective channel length. By using the very high output resistance of the Corbino structure TFTs, we fabricated the high-gain complementary logic inverter composed of Corbino p-type SnO and n-type IGZO TFTs. The Corbino TFT-based complementary logic inverter showed a voltage gain of 92.4 at a supplied voltage of 10 V, which was significantly higher than that of 18.7 obtained from the complementary logic inverter composed of the conventional rectangular shaped TFTs.