Journal
IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS
Volume 18, Issue 11, Pages 2404-2408Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LAWP.2019.2927300
Keywords
Antenna-circuit co-design; dual-polarization; on-chip antenna; SiGe heterojunction bipolar transistor (HBT); terahertz direct detector
Funding
- German Research Foundation (DFG) [SFB/Transregio 196 MARIE]
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In this letter, a silicon lens-coupled dual-polarization on-chip ring antenna for THz direct detection in 0.13 mu m SiGe heterojunction bipolar transistor (HBT) technology is presented. In particular, various circuit-antenna co-design aspects are addressed, including the detector frequency-dependent driving impedance and responsivity, and the necessity of accommodating multiple dc signal lines in the antenna layout. Due to an adequate circuit/electromagnetic (EM) modeling approach, close-to-optimum detector operation in a near-THz fractional bandwidth with consistent radiation patterns up to 1 THz and state-of-the-art peak optical responsivity of 3.1 A/W around 400-500 GHz among silicon direct detectors could be demonstrated.
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