Journal
ELECTROCHIMICA ACTA
Volume 319, Issue -, Pages 41-48Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2019.06.168
Keywords
Nickel oxide films; Magnetron sputtering; Dopant-free; Hole transporting layer; Perovskite solar cells
Categories
Funding
- National Natural Science Foundation of China [61605059, 61775081, 61705079]
- Program for the development of Science and Technology of Jilin province [20180520182JH, 20180519016JH]
- Thirteenth Five-Year Program for Science and Technology of Education Department of Jilin Province [JJKH20180759KJ, JJKH20190998KJ]
- Talent Development Fund Project in Jilin Province
- Special Project of Industrial Technology Research and Development in Jilin Province [2019C042-2]
- Construction Program for Innovation Research Team of Jilin Normal University [201703]
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Simultaneously modulating the optical and electrical properties of the hole transporting layer (HTL) plays a vital role in the performance of p-i-n perovskite solar cells (PSCs). Here, a negligible hysteresis inverted planar PSC with 17.30% power conversion efficiency was successfully fabricated by employing a thin and non-stoichiometric dopant-free nickel oxide (DF-NiOx) film as the HTL. The DF-NiOx film was formed by a radio frequency magnetron sputtering method. The Ni3+ content as well as the crystallization of the DF-NiOx thin films were tuned by regulating the post-annealing treatment, leading to enhanced optical transmittance and electrical conductivity. The optimized DF-NiOx films exhibit a high transmittance of more than 90%, appropriate conductivity, uniform surface morphology, and a better energy level match with the perovskite layer. This study not only highlights the importance of optimizing the Ni3+ content and crystallization for the formation of high-performance DF-NiOx HTLs, but also provides an excellent device platform for making large area high-performance PSCs and tandem solar cells. (C) 2019 Elsevier Ltd. All rights reserved.
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