Journal
APPLIED SURFACE SCIENCE
Volume 506, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2019.144673
Keywords
beta-Ga2O3; ICP-RIE; B2O3; Dry etch-induced damage; Post-wet chemical treatments
Categories
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education, Republic of Korea [NRF-2017R1A2B2003365]
- Korea Basic Science Institute under the RD program [C38521]
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Post-wet chemical treatments using sulfuric acid and hydrogen peroxide mixture (SPM) or tetramethyl ammonium hydroxide (TMAH) solutions were performed to reduce dry etch-induced surface damage of beta-Ga2O3 caused by the inductively coupled plasma-reactive ion etching (ICP-RIE) process using the Cl-2/BCl3 gas mixture. The addition of BCl3 to the Cl-2/BCl3 gas mixture resulted in a significant enhancement of the etch rate of beta-Ga2O3 . However, it increased the surface roughness with the formation of the nonvolatile etch by-product B2O3 as a result of the BCl3/beta-Ga2O3 reaction. The post-SPM treatment led to the reduction of dry etch-induced surface damage of beta-Ga2O3 to a certain extent with the removal of B2O3. On the other hand, the post-TMAH treatment significantly improved the surface morphology of the dry etched beta-Ga2O3 surface. During the post-TMAH treatment, the chemical reaction between the damaged beta-Ga2O3 layer caused by ICP-RIE process and OH- in the TMAH solution led to the formation of the Ga oxide, followed by the simultaneous dissolution of the Ga oxide and the B2O3. Thus, the post-TMAH treatment effectively recovered the surface damage of beta-Ga2O3 induced by the ICP-RIE process using the Cl-2/BCl3 gas mixture.
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