Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5125788
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Funding
- Office of Naval Research
- Simons Foundation [601952]
- NSF RAISE-TAQS Program from the University of Minnesota [1839077]
- Direct For Mathematical & Physical Scien
- Division Of Mathematical Sciences [1839077] Funding Source: National Science Foundation
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The electrical properties and the interface abruptness of aluminum silicon oxide (AlSiO) dielectric grown in situ on (000 (1) over bar) N-polar and (0001) Ga-polar GaN by metal organic chemical vapor deposition were studied by means of capacitance-voltage (CV) and atom probe tomography (APT) measurements. The growth of AlSiO on N-polar GaN resulted in a positive flatband voltage shift of 2.27 V with respect to that on Ga-polar GaN, which exemplifies the influence of the GaN surface polarization charge on the electrical properties of GaN-based metal oxide semiconductor (MOS) devices. The AlSiO/GaN(N-polar) interface was sharp, which resulted in nondispersive CV characteristics and a relatively low density of interface states (D-it) of 1.48 x 10(12) cm(-2). An intermixed layer of AlGaSiO was present at the interface between AlSiO and Ga-polar GaN, which contributed to the measured dispersive CV characteristics and resulted in an similar to 2x higher D-it than that on N-polar GaN. The superior properties of the N-polar AlSiO MOS devices are promising for further advancement of N-polar GaN-based high electron mobility transistors for high-frequency and power electronics applications. Published under license by AIP Publishing.
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