Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5115013
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Funding
- Pennsylvania State University by AFOSR Young Investigator Program [FA9550-17-1-0141]
- NSF [DMR-1808900]
- Penn State NSF-MRSEC Center for the Nanoscale Science [DMR 1420620]
- U.S. Department of Energy's National Nuclear Security Administration [DE-NA0003525]
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Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.
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