Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5123776
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Funding
- National Natural Science Foundation of China [51732010, 51672240, 51801175]
- Natural Science Foundation of Hebei Province [E2019203233]
- China Postdoctoral Science Foundation [2019TQ0207]
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Wafer-scale monolayer WS2 has been widely investigated. Here, we report a repeatable and low-cost one-step chemical vapor deposition method for the direct growth of a 4-in. monolayer WS2 film on a thermal oxide silicon wafer by using WO3 and H2S gas as precursors. H2S gas exhibits a high vulcanization ability and can effectively reduce the growth temperature of WS2 to 825 degrees C. The growth process follows a self-limiting growth to form a monolayer polycrystalline film, which is merged via many stable small-angle grain boundaries. The wafer-scale monolayer WS2 film shows uniform and high-quality electrical properties. This method helps promote the future production and application of wafer-scale monolayer sulfide. Published under license by AIP Publishing.
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