Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab4d30
Keywords
resistive random access memory; passive device; high-density memory arrays; SnO2 nanorod arrays; ZnO quantum dots
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Funding
- National Natural Science Foundation of China [61805101, 61604060]
- Shandong Provincial Natural Science Foundation of China [ZR2017JL027, ZR2018BF025, ZR2019BF013]
- China Postdoctoral Science Foundation [2018M632605]
- Project of Independent Cultivated Innovation Team of Jinan City [2018GXRC002]
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To develop high-density memory arrays, a self-rectifying resistive random access memory based on a Cu/SnO2 nanorod array: ZnO nanoparticle (NP)/fluorine-doped tin oxide (FTO) structure is proposed to avoid the sneak current. The proposed device exhibits transparent property and significant merits including high ON/OFF ratio, conspicuous endurance and superior data retention. A carrier transport model based on a SnO2/FTO Schottky barrier, ZnO NP trap effect and Cu filament is proposed to explain the self-rectifying resistive switching performance. This work provides a new method to effectively avoid sneak current and also shows promising prospects in constructing high-performance transparent memory arrays. (C) 2019 The Japan Society of Applied Physics
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